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EDD5104ABTA-7B 参数 Datasheet PDF下载

EDD5104ABTA-7B图片预览
型号: EDD5104ABTA-7B
PDF下载: 下载PDF文件 查看货源
内容描述: 512M比特DDR SDRAM [512M bits DDR SDRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 50 页 / 438 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDD5104ABTA, EDD5108ABTA  
A Write command to the consecutive Precharge command interval (same bank)  
The minimum interval tWPD ((BL/2 + 3 for tCK = 7.5 ns, BL/2 + 4 for tCK = 6 ns) cycles) is necessary between the  
write command and the precharge command.  
t0  
t1  
t2  
t3  
t4  
t5  
t6  
t7  
CK  
/CK  
Command  
PRE/PALL  
WRIT  
NOP  
tWPD  
NOP  
tWR  
DM  
DQS  
DQ  
in0  
in1  
in2  
in3  
Last data input  
WRITE to PRECHARGE Command Interval (same bank) (BL = 4)  
Precharge Termination in Write Cycles  
During a burst write cycle without auto precharge, the burst write operation is terminated by a precharge command  
of the same bank. In order to write the last input data, tWR (min) must be satisfied. When the precharge command  
is issued, the invalid data must be masked by DM.  
t0  
t1  
t2  
t3  
t4  
t5  
t6  
t7  
CK  
/CK  
Command  
PRE/PALL  
WRIT  
NOP  
NOP  
tWR  
DM  
DQS  
DQ  
in0  
in1  
Data masked  
Precharge Termination in Write Cycles (same bank) (BL = 4)  
Preliminary Data Sheet E0237E30 (Ver. 3.0)  
38  
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