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EBJ21UE8BFU0-GN-F 参数 Datasheet PDF下载

EBJ21UE8BFU0-GN-F图片预览
型号: EBJ21UE8BFU0-GN-F
PDF下载: 下载PDF文件 查看货源
内容描述: 2GB DDR3 SDRAM SO- DIMM [2GB DDR3 SDRAM SO-DIMM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 16 页 / 247 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EBJ21UE8BFU0  
DC Characteristics 1 (TC = 0°C to +85°C, VDD = 1.5V ± 0.075V, VSS = 0V)  
Data rate (Mbps)  
Parameter  
1600  
max.  
1333  
max.  
Symbol  
IDD0  
Unit  
mA  
Notes  
Operating current  
(ACT-PRE)  
(Another rank is in IDD2P1)  
1200  
1440  
1320  
1560  
1080  
1280  
1200  
1400  
Operating current  
(ACT-PRE)  
IDD0  
IDD1  
IDD1  
mA  
mA  
mA  
(Another rank is in IDD3N)  
Operating current  
(ACT-READ-PRE)  
(Another rank is in IDD2P1)  
Operating current  
(ACT-READ-PRE)  
(Another rank is in IDD3N)  
IDD2P1  
IDD2P0  
IDD2N  
720  
640  
224  
960  
960  
880  
mA  
mA  
mA  
mA  
mA  
Fast PD Exit  
Slow PD Exit  
Precharge power-down standby  
current  
240  
Precharge standby current  
1040  
1040  
960  
Precharge standby ODT current  
Precharge quiet standby current  
IDD2NT  
IDD2Q  
Active power-down current  
(Always fast exit)  
Active standby current  
IDD3P  
IDD3N  
720  
640  
mA  
mA  
1200  
1040  
Operating current  
(Burst read operating)  
IDD4R  
IDD4R  
IDD4W  
IDD4W  
2200  
2440  
2280  
2520  
1920  
2120  
2000  
2200  
mA  
mA  
mA  
mA  
(Another rank is in IDD2P1)  
Operating current  
(Burst read operating)  
(Another rank is in IDD3N)  
Operating current  
(Burst write operating)  
(Another rank is in IDD2P1)  
Operating current  
(Burst write operating)  
(Another rank is in IDD3N)  
Burst refresh current  
IDD5B  
IDD5B  
IDD7  
2600  
2840  
3160  
2480  
2680  
2800  
mA  
mA  
mA  
(Another rank is in IDD2P1)  
Burst refresh current  
(Another rank is in IDD3N)  
All bank interleave read current  
(Another rank is in IDD2P1)  
All bank interleave read current  
(Another rank is in IDD3N)  
RESET low current  
IDD7  
IDD8  
3400  
128  
3000  
128  
mA  
mA  
Data Sheet E1642E30 (Ver. 3.0)  
10