EBE41EF8ABFA
-8G
-6E
Speed bin
Parameter
DDR2-800 (6-6-6)
min.
DDR2-667 (5-5-5)
min.
Symbol
tWPST
max.
0.6
max.
0.6
Unit
Notes
tCK
(avg)
Write postamble
Write preamble
0.4
0.4
tCK
(avg)
tWPRE
0.35
0.35
Address and control input hold time tIH (base) 250
Address and control input setup time tIS (base) 175
275
200
ps
ps
5
4
tCK
(avg)
Read preamble
Read postamble
tRPRE
tRPST
0.9
0.4
1.1
0.9
0.4
1.1
11
12
tCK
(avg)
0.6
0.6
Active to precharge command
Active to auto precharge delay
tRAS
tRAP
45
70000
45
70000
ns
ns
tRCD min.
tRCD min.
Active bank A to active bank B
command period
tRRD
7.5
7.5
ns
Four active window period
/CAS to /CAS command delay
Write recovery time
tFAW
tCCD
tWR
35
2
37.5
2
ns
nCK
ns
15
15
Auto precharge write recovery +
precharge time
WR +
RU(tRP/tCK(avg))
WR +
RU(tRP/tCK(avg))
tDAL
nCK 1, 9
Internal write to read command delay tWTR
7.5
7.5
ns
ns
14
Internal read to precharge command
tRTP
7.5
7.5
delay
Exit self-refresh to a non-read
command
tXSNR
tRFC + 10
tRFC + 10
ns
Exit self-refresh to a read command tXSRD
200
2
200
2
nCK
nCK
Exit precharge power-down to any
tXP
non-read command
Exit active power-down to read
command
tXARD
2
2
nCK
3
Exit active power-down to read
command
tXARDS
8 − AL
7 − AL
nCK 2, 3
nCK
(slow exit/low power mode)
CKE minimum pulse width (high and
low pulse width)
tCKE
tOIT
3
3
Output impedance test driver delay
0
0
12
12
0
0
12
12
ns
ns
MRS command to ODT update delay tMOD
Auto-refresh to active/auto-refresh
command time
tRFC
195
195
ns
Average periodic refresh interval
tREFI
7.8
3.9
7.8
3.9
µs
µs
ns
(0°C ≤ TC ≤ +85°C)
(+85°C < TC ≤ +95°C)
tREFI
Minimum time clocks remains ON
after CKE asynchronously drops low
tIS + tCK(avg) +
tIH
tIS + tCK(avg) +
tIH
tDELAY
Preliminary Data Sheet E1285E10 (Ver. 1.0)
19
ELPIDA [ ELPIDA MEMORY ]
