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EBE41EF8ABFA 参数 Datasheet PDF下载

EBE41EF8ABFA图片预览
型号: EBE41EF8ABFA
PDF下载: 下载PDF文件 查看货源
内容描述: 4GB无缓冲DDR2 SDRAM DIMM [4GB Unbuffered DDR2 SDRAM DIMM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 30 页 / 242 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EBE41EF8ABFA  
AC Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V, VSS, VSSQ = 0V)  
(DDR2 SDRAM Component Specification)  
New units tCK(avg) and nCK, are introduced in DDR2-800 and DDR2-667  
tCK(avg): actual tCK(avg) of the input clock under operation.  
nCK: one clock cycle of the input clock, counting the actual clock edges.  
-8G  
-6E  
Speed bin  
Parameter  
DDR2-800 (6-6-6)  
min.  
DDR2-667 (5-5-5)  
min.  
Symbol  
tRCD  
tRP  
max.  
max.  
Unit  
ns  
Notes  
Active to read or write command  
delay  
15  
15  
Precharge command period  
15  
15  
ns  
Active to active/auto-refresh  
command time  
tRC  
60  
60  
ns  
DQ output access time from CK, /CK tAC  
DQS output access time from CK,  
/CK  
400  
350  
+400  
+350  
450  
400  
+450  
+400  
ps  
10  
10  
tDQSCK  
ps  
tCK  
(avg)  
CK high-level width  
tCH (avg) 0.48  
0.52  
0.52  
0.48  
0.48  
0.52  
0.52  
13  
tCK  
(avg)  
CK low-level width  
CK half period  
tCL(avg)  
tHP  
0.48  
13  
Min. (tCL(abs),  
tCH(abs))  
Min.(tCL(abs),  
tCH(abs))  
ps  
ps  
6, 13  
13  
Clock cycle time  
(CL = 6)  
tCK (avg) 2500  
8000  
3000  
8000  
(CL = 5)  
tCK (avg) 3000  
tCK (avg) 3750  
tCK (avg) 5000  
tDH (base) 125  
tDS (base) 50  
8000  
8000  
8000  
3000  
3750  
5000  
175  
8000  
8000  
8000  
ps  
ps  
ps  
ps  
ps  
13  
13  
13  
5
(CL = 4)  
(CL = 3)  
DQ and DM input hold time  
DQ and DM input setup time  
100  
4
Control and Address input pulse  
width for each input  
tCK  
(avg)  
tIPW  
tDIPW  
tHZ  
0.6  
0.6  
DQ and DM input pulse width for  
each input  
tCK  
(avg)  
0.35  
0.35  
Data-out high-impedance time from  
CK,/CK  
tAC max.  
tAC max. ps  
10  
DQS, /DQS low-impedance time from  
CK,/CK  
tLZ (DQS) tAC min.  
tAC max.  
tAC max.  
200  
tAC min.  
tAC max. ps  
tAC max. ps  
10  
10  
DQ low-impedance time from CK,/CK tLZ (DQ)  
2 × tAC min.  
2 × tAC min.  
DQS-DQ skew for DQS and  
tDQSQ  
240  
340  
ps  
associated DQ signals  
DQ hold skew factor  
tQHS  
300  
ps  
ps  
7
8
DQ/DQS output hold time from DQS tQH  
DQS latching rising transitions to  
associated clock edges  
tHP – tQHS  
tHP – tQHS  
tCK  
(avg)  
tDQSS  
0.25  
+0.25  
0.25  
+0.25  
tCK  
(avg)  
DQS input high pulse width  
tDQSH  
tDQSL  
tDSS  
0.35  
0.35  
0.2  
0.2  
2
0.35  
0.35  
0.2  
0.2  
2
tCK  
(avg)  
DQS input low pulse width  
tCK  
(avg)  
DQS falling edge to CK setup time  
tCK  
(avg)  
DQS falling edge hold time from CK tDSH  
Mode register set command cycle  
time  
tMRD  
nCK  
Preliminary Data Sheet E1285E10 (Ver. 1.0)  
18  
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