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EBE21UE8AESA 参数 Datasheet PDF下载

EBE21UE8AESA图片预览
型号: EBE21UE8AESA
PDF下载: 下载PDF文件 查看货源
内容描述: 2GB DDR2 SDRAM SO- DIMM [2GB DDR2 SDRAM SO-DIMM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 29 页 / 254 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EBE21UE8AESA  
11. When the device is operated with input clock jitter, this parameter needs to be derated by the actual  
tJIT(per) of the input clock. (output deratings are relative to the SDRAM input clock.)  
For example, if the measured jitter into a DDR2-667 SDRAM has tJIT(per) min. = 72ps and  
tJIT(per) max. = +93ps, then tRPRE min.(derated) = tRPRE min. + tJIT(per) min. = 0.9 × tCK(avg) 72ps  
= +2178ps and tRPRE max.(derated) = tRPRE max. + tJIT(per) max. = 1.1 × tCK(avg) + 93ps = +2843ps.  
12. When the device is operated with input clock jitter, this parameter needs to be derated by the actual  
tJIT(duty) of the input clock. (output deratings are relative to the SDRAM input clock.)  
For example, if the measured jitter into a DDR2-667 SDRAM has tJIT(duty) min. = 72ps and  
tJIT(duty) max. = +93ps, then tRPST min.(derated) = tRPST min. + tJIT(duty) min. = 0.4 × tCK(avg) −  
72ps = +928ps and tRPST max.(derated) = tRPST max. + tJIT(duty) max. = 0.6 × tCK(avg) + 93ps =  
+1592ps.  
13. Refer to the Clock Jitter table.  
14. tWTR is at least two clocks (2 × tCK or 2 × nCK) independent of operation frequency.  
Data Sheet E1298E40 (Ver. 4.0)  
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