EBE21UE8AESA
-8G
-6E
DDR2-667 (5-5-5)
Speed bin
DDR2-800 (6-6-6)
Parameter
Symbol
tRPST
tRAS
min.
max.
0.6
min.
max.
0.6
Unit
Notes
Read postamble
0.4
0.4
tCK (avg) 12
Active to precharge command
Active to auto-precharge delay
45
70000
45
70000
ns
ns
tRAP
tRCD min.
tRCD min.
Active bank A to active bank B command
period
tRRD
7.5
7.5
ns
Four active window period
/CAS to /CAS command delay
Write recovery time
tFAW
tCCD
tWR
35
2
37.5
2
ns
nCK
ns
15
15
WR +
RU (tRP/
tCK (avg))
WR +
RU (tRP/
tCK (avg))
Auto precharge write recovery + precharge
time
tDAL
nCK
1, 9
Internal write to read command delay
tWTR
7.5
7.5
ns
14
Internal read to precharge command delay tRTP
7.5
7.5
ns
Exit self-refresh to a non-read command
Exit self-refresh to a read command
tXSNR
tRFC + 10
200
tRFC + 10
200
ns
tXSRD
tXP
nCK
Exit precharge power down to any non-read
command
2
2
nCK
nCK
nCK
Exit active power down to read command
tXARD
tXARDS
2
2
3
Exit active power down to read command
(slow exit/low power mode)
8 − AL
7 − AL
2, 3
CKE minimum pulse width (high and low
pulse width)
tCKE
3
3
nCK
Output impedance test driver delay
MRS command to ODT update delay
tOIT
0
0
12
12
0
0
12
12
ns
ns
tMOD
Auto-refresh to active/auto-refresh
command time
tRFC
127.5
127.5
ns
Average periodic refresh interval
(0°C ≤ TC ≤ +85°C)
tREFI
tREFI
7.8
3.9
7.8
3.9
µs
µs
(+85°C < TC ≤ +95°C)
tIS +
tCK(avg) +
tIH
tIS +
tCK(avg) +
tIH
Minimum time clocks remains ON after CKE
asynchronously drops low
tDELAY
ns
Data Sheet E1298E40 (Ver. 4.0)
18
ELPIDA [ ELPIDA MEMORY ]
