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EBE21EE8ABFA-4A-E 参数 Datasheet PDF下载

EBE21EE8ABFA-4A-E图片预览
型号: EBE21EE8ABFA-4A-E
PDF下载: 下载PDF文件 查看货源
内容描述: 2GB无缓冲DDR2 SDRAM DIMM [2GB Unbuffered DDR2 SDRAM DIMM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 27 页 / 217 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EBE21EE8ABFA  
DC Characteristics 1 (TC = 0°C to +85°C, VDD = 1.8V ± 0.1V, VSS = 0V)  
Parameter  
Symbol Grade  
-8E  
max.  
Unit  
mA  
Test condition  
1080  
990  
945  
900  
Operating current  
(ACT-PRE)  
(Another rank is in IDD2P)  
-6E  
-5C  
IDD0  
one bank; tCK = tCK (IDD), tRC = tRC (IDD),  
tRAS = tRAS min.(IDD);  
CKE is H, /CS is H between valid commands;  
Address bus inputs are SWITCHING;  
Data bus inputs are SWITCHING  
-4A  
-8E  
1800  
1620  
1440  
1305  
Operating current  
(ACT-PRE)  
(Another rank is in IDD3N)  
-6E  
IDD0  
mA  
mA  
mA  
-5C  
-4A  
-8E  
1215  
1125  
1080  
1035  
Operating current  
one bank; IOUT = 0mA;  
BL = 4, CL = CL(IDD), AL = 0;  
-6E  
IDD1  
(ACT-READ-PRE)  
(Another rank is in IDD2P)  
-5C  
tCK = tCK (IDD), tRC = tRC (IDD),  
tRAS = tRAS min.(IDD); tRCD = tRCD (IDD);  
CKE is H, /CS is H between valid commands;  
Address bus inputs are SWITCHING;  
Data pattern is same as IDD4W  
-4A  
-8E  
1935  
1755  
1575  
1440  
Operating current  
-6E  
IDD1  
(ACT-READ-PRE)  
(Another rank is in IDD3N)  
-5C  
-4A  
all banks idle;  
tCK = tCK (IDD);  
CKE is L;  
Other control and address bus inputs are STABLE;  
Data bus inputs are FLOATING  
Precharge power-down  
standby current  
IDD2P  
180  
mA  
mA  
mA  
all banks idle;  
tCK = tCK (IDD);  
CKE is H, /CS is H;  
Other control and address bus inputs are STABLE;  
Data bus inputs are FLOATING  
-8E  
-6E  
-5C  
-4A  
720  
630  
540  
540  
Precharge quiet standby  
current  
IDD2Q  
all banks idle;  
tCK = tCK (IDD);  
CKE is H, /CS is H;  
Other control and address bus inputs are SWITCHING;  
Data bus inputs are SWITCHING  
-8E  
810  
720  
630  
540  
-6E  
IDD2N  
Idle standby current  
-5C  
-4A  
-8E  
-6E  
IDD3P-F  
-5C  
720  
630  
540  
540  
all banks open;  
Fast PDN Exit  
mA  
mA  
tCK = tCK (IDD);  
MRS(12) = 0  
Active power-down  
standby current  
CKE is L;  
Other control and address bus  
-4A  
inputs are STABLE;  
Data bus inputs are FLOATING  
Slow PDN Exit  
MRS(12) = 1  
IDD3P-S  
360  
all banks open;  
-8E  
-6E  
-5C  
-4A  
1620  
1440  
1170  
990  
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);  
CKE is H, /CS is H between valid commands;  
Other control and address bus inputs are SWITCHING;  
Data bus inputs are SWITCHING  
Active standby current  
IDD3N  
mA  
-8E  
2115  
1845  
1575  
1350  
Operating current  
-6E  
IDD4R  
all banks open, continuous burst reads, IOUT = 0mA;  
BL = 4, CL = CL(IDD), AL = 0;  
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);  
CKE is H, /CS is H between valid commands;  
Address bus inputs are SWITCHING;  
mA  
mA  
mA  
mA  
(Burst read operating)  
(Another rank is in IDD2P)  
-5C  
-4A  
-8E  
2835  
2475  
2070  
1755  
Operating current  
-6E  
IDD4R  
(Burst read operating)  
(Another rank is in IDD3N)  
Data pattern is same as IDD4W  
-5C  
-4A  
-8E  
2115  
1845  
1575  
1350  
Operating current  
-6E  
IDD4W  
all banks open, continuous burst writes;  
BL = 4, CL = CL(IDD), AL = 0;  
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);  
CKE is H, /CS is H between valid commands;  
Address bus inputs are SWITCHING;  
Data bus inputs are SWITCHING  
(Burst write operating)  
(Another rank is in IDD2P)  
-5C  
-4A  
-8E  
2835  
2475  
2070  
1755  
Operating current  
-6E  
IDD4W  
(Burst write operating)  
(Another rank is in IDD3N)  
-5C  
-4A  
Preliminary Data Sheet E0907E10 (Ver. 1.0)  
12  
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