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EBE11UD8AJUA-8E-E 参数 Datasheet PDF下载

EBE11UD8AJUA-8E-E图片预览
型号: EBE11UD8AJUA-8E-E
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM Module, 128MX64, 0.4ns, CMOS, ROHS COMPLIANT, SODIMM-200]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 28 页 / 259 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EBE11UD8AJUA  
11. When the device is operated with input clock jitter, this parameter needs to be derated by the actual  
tJIT(per) of the input clock. (output deratings are relative to the SDRAM input clock.)  
For example, if the measured jitter into a DDR2-667 SDRAM has tJIT(per) min. = 72ps and  
tJIT(per) max. = +93ps, then tRPRE min.(derated) = tRPRE min. + tJIT(per) min. = 0.9 × tCK(avg) 72ps  
= +2178ps and tRPRE max.(derated) = tRPRE max. + tJIT(per) max. = 1.1 × tCK(avg) + 93ps = +2843ps.  
12. When the device is operated with input clock jitter, this parameter needs to be derated by the actual  
tJIT(duty) of the input clock. (output deratings are relative to the SDRAM input clock.)  
For example, if the measured jitter into a DDR2-667 SDRAM has tJIT(duty) min. = 72ps and  
tJIT(duty) max. = +93ps, then tRPST min.(derated) = tRPST min. + tJIT(duty) min. = 0.4 × tCK(avg) −  
72ps = +928ps and tRPST max.(derated) = tRPST max. + tJIT(duty) max. = 0.6 × tCK(avg) + 93ps =  
+1592ps.  
13. Refer to the Clock Jitter table.  
14. tWTR is at least two clocks (2 × tCK or 2 × nCK) independent of operation frequency.  
Data Sheet E1083E20 (Ver. 2.0)  
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