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EBE11UD8AJUA-8E-E 参数 Datasheet PDF下载

EBE11UD8AJUA-8E-E图片预览
型号: EBE11UD8AJUA-8E-E
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM Module, 128MX64, 0.4ns, CMOS, ROHS COMPLIANT, SODIMM-200]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 28 页 / 259 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EBE11UD8AJUA  
AC Overshoot/Undershoot Specification (DDR2 SDRAM Component Specification)  
Parameter  
Pins  
Specification  
Unit  
V
Command, Address,  
CKE, ODT  
Maximum peak amplitude allowed for overshoot  
Maximum peak amplitude allowed for undershoot  
0.5  
0.5  
V
Maximum overshoot area above VDD  
DDR2-800  
0.66  
0.8  
V-ns  
V-ns  
V-ns  
DDR2-667  
Maximum undershoot area below VSS  
DDR2-800  
0.66  
DDR2-667  
0.8  
0.5  
0.5  
V-ns  
V
Maximum peak amplitude allowed for overshoot  
Maximum peak amplitude allowed for undershoot  
CK, /CK  
V
Maximum overshoot area above VDD  
DDR2-800, 667  
0.23  
V-ns  
Maximum undershoot area below VSS  
DDR2-800, 667  
0.23  
0.5  
V-ns  
V
Maximum peak amplitude allowed for overshoot  
DQ, DQS, /DQS,  
UDQS, /UDQS,  
LDQS, /LDQS,  
Maximum peak amplitude allowed for undershoot  
0.5  
V
Maximum overshoot area above VDDQ  
DDR2-800, 667  
RDQS, /RDQS,  
DM, UDM, LDM  
0.23  
0.23  
V-ns  
V-ns  
Maximum undershoot area below VSSQ  
DDR2-800, 667  
Maximum amplitude  
Overshoot area  
VDD, VDDQ  
Volts (V)  
VSS, VSSQ  
Undershoot area  
Time (ns)  
Overshoot/Undershoot Definition  
Data Sheet E1083E20 (Ver. 2.0)  
10  
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