EBD10RD4ABFA
DC Characteristics 1 (TA = 0 to +70°C, VDD = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol
IDD0
Grade
max.
Unit
mA
Test condition
Notes
1, 2, 9
-6B
-7A, -7B
3165
2830
CKE ≥ VIH,
tRC = tRC (min.)
Operating current (ACTV-PRE)
CKE ≥ VIH, BL = 4,
Operating current
(ACTV-READ-PRE)
-6B
-7A, -7B
3525
3190
IDD1
mA
CL = 3.5,
1, 2, 5
tRC = tRC (min.)
-6B
520
454
1185
1030
915
850
825
760
1725
1480
4065
3460
4065
3460
5685
5260
Idle power down standby current
Floating idle standby current
Quiet idle standby current
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
CKE ≤ VIL
4
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
CKE ≥ VIH, /CS ≥ VIH,
DQ, DQS, DM = VREF
CKE ≥ VIH, /CS ≥ VIH,
DQ, DQS, DM = VREF
4, 5
4, 10
3
Active power down
standby current
CKE ≤ VIL
CKE ≥ VIH, /CS ≥ VIH
tRAS = tRAS (max.)
CKE ≥ VIH, BL = 2,
CL = 3.5
CKE ≥ VIH, BL = 2,
CL = 3.5
tRFC = tRFC (min.),
Input ≤ VIL or ≥ VIH
Active standby current
3, 5, 6
1, 2, 5, 6
1, 2, 5, 6
Operating current
(Burst read operation)
Operating current
(Burst write operation)
Auto refresh current
538
472
8025
6880
Input ≥ VDD – 0.2 V
Input ≤ 0.2 V
Self refresh current
IDD6
Operating current
(4 banks interleaving)
-6B
-7A, -7B
IDD7A
BL = 4
5, 6, 7
Notes. 1. These IDD data are measured under condition that DQ pins are not connected.
2. One bank operation.
3. One bank active.
4. All banks idle.
5. Command/Address transition once per one cycle.
6. Data/Data mask transition twice per one cycle.
7. 4 banks active. Only one bank is running at tRC = tRC (min.)
8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general.
9. Command/Address transition once every two clock cycles.
10. Command/Address stable at ≥ VIH or ≤ VIL.
DC Characteristics 2 (TA = 0 to +70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V)
(DDR SDRAM Component Specification)
Parameter
Symbol
IL
min.
–2
max.
2
Unit
µA
Test condition
Notes
Input leakage current
Output leakage current
Output high current
Output low current
VDD ≥ VIN ≥ VSS
VDDQ ≥ VOUT ≥ VSS
VOUT = 1.95V
IOZ
–5
5
µA
IOH
IOL
–15.2
15.2
—
—
mA
mA
VOUT = 0.35V
Preliminary Data Sheet E0274E40 (Ver. 4.0)
11
ELPIDA [ ELPIDA MEMORY ]
