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EBD11UD8ABFB-7B 参数 Datasheet PDF下载

EBD11UD8ABFB-7B图片预览
型号: EBD11UD8ABFB-7B
PDF下载: 下载PDF文件 查看货源
内容描述: 1GB无缓冲DDR SDRAM DIMM [1GB Unbuffered DDR SDRAM DIMM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 19 页 / 207 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EBD11UD8ABFB  
DC Characteristics 1 (TA = 0 to 70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V)  
Parameter  
Symbol  
IDD0  
Grade  
max.  
Unit  
mA  
Test condition  
Notes  
1, 2, 9  
-6B  
-7A, -7B  
1760  
1560  
CKE VIH,  
tRC = tRC (min.)  
Operating current (ACTV-PRE)  
CKE VIH, BL = 4,  
-6B  
-7A, -7B  
2000  
1760  
Operating current  
(ACTV-READ-PRE)  
IDD1  
mA  
CL = 2.5,  
1, 2, 5  
tRC = tRC (min.)  
Idle power down standby current  
Floating idle standby current  
IDD2P  
IDD2F  
48  
640  
560  
mA  
mA  
CKE VIL  
CKE VIH, /CS VIH,  
DQ, DQS, DM = VREF  
4
-6B  
-7A, -7B  
4, 5  
CKE VIH, /CS VIH,  
Quiet idle standby current  
IDD2Q  
IDD3P  
IDD3N  
IDD4R  
IDD4W  
IDD5  
400  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
4, 10  
DQ, DQS, DM = VREF  
Active power down  
standby current  
320  
CKE VIL  
3
-6B  
-7A, -7B  
-6B  
-7A, -7B  
-6B  
-7A, -7B  
-6B  
-7A, -7B  
1120  
960  
CKE VIH, /CS VIH  
tRAS = tRAS (max.)  
CKE VIH, BL = 2,  
CL = 2.5  
CKE VIH, BL = 2,  
CL = 2.5  
tRFC = tRFC (min.),  
Input VIL or VIH  
Active standby current  
3, 5, 6  
1, 2, 5, 6  
1, 2, 5, 6  
2240  
1920  
2240  
1920  
4640  
4320  
Operating current  
(Burst read operation)  
Operating current  
(Burst write operation)  
Auto refresh current  
Self refresh current  
Input VDD – 0.2 V  
Input 0.2 V  
IDD6  
64  
-6B  
-7A, -7B  
4000  
3440  
Operating current  
(4 banks interleaving)  
IDD7A  
BL = 4  
5, 6, 7  
Notes. 1. These IDD data are measured under condition that DQ pins are not connected.  
2. One bank operation.  
3. One bank active.  
4. All banks idle.  
5. Command/Address transition once per one cycle.  
6. Data/Data mask transition twice per one cycle.  
7. 4 banks active. Only one bank is running at tRC = tRC (min.)  
8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general.  
9. Command/Address transition once every two clock cycles.  
10. Command/Address stable at VIH or VIL.  
DC Characteristics 2 (TA = 0 to 70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V)  
Parameter  
Symbol  
ILI  
min.  
–32  
max.  
32  
Unit  
µA  
Test condition  
Notes  
Input leakage current  
Output leakage current  
Output high current  
Output low current  
VDD VIN VSS  
VDD VOUT VSS  
VOUT = 1.95V  
ILO  
–10  
10  
µA  
IOH  
IOL  
–15.2  
15.2  
mA  
mA  
VOUT = 0.35V  
Pin Capacitance (TA = 25°C, VDD, VDDQ = 2.5V ± 0.2V)  
Parameter  
Symbol  
CI1  
Pins  
max.  
Unit  
pF  
Notes  
Address, /RAS, /CAS, /WE,  
/CS, CKE  
CK, /CK  
Input capacitance  
Input capacitance  
Data and DQS input/output  
capacitance  
TBD  
TBD  
TBD  
CI2  
pF  
CO  
DQ, DQS  
pF  
Preliminary Data Sheet E0296E20 (Ver. 2.0)  
11  
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