GD25Q32CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash
http://www.elm-tech.com
Symbol
Parameter
Min.
Typ.
Max.
Unit.
tSHCH CS# Not Active Setup Time
5
5
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
μs
μs
μs
μs
ms
μs
μs
ms
tCHSL CS# Not Active Hold Time
tSHSL CS# High Time (Read/Write)
20
tSHQZ Output Disable Time
6
tCLQX Output Hold Time
1.2
2
tDVCH Data In Setup Time
tCHDX Data In Hold Time
2
tHLCH Hold# Low Setup Time (Relative to Clock)
tHHCH Hold# High Setup Time (Relative to Clock)
tCHHL Hold# High Hold Time (Relative to Clock)
tCHHH Hold# Low Hold Time (Relative to Clock)
tHLQZ Hold# Low To High-Z Output
5
5
5
5
6
6
7
tHHQX Hold# High To Low-Z Output
tCLQV Clock Low To Output Valid
tWHSL Write Protect Setup Time Before CS# Low
tSHWL Write Protect Hold Time After CS# High
tDP CS# High To Deep Power-Down Mode
tRES1 CS# High To Standby Mode Without Electronic Signature Read
tRES2 CS# High To Standby Mode With Electronic Signature Read
tSUS CS# High To Next Command After Suspend
tRST CS# High To Next Command After Reset
20
100
20
20
20
20
20
30
50
12
2.4
tW
Write Status Register Cycle Time
5
tBP1 Byte Program Time (First Byte)
30
tBP2 Additional Byte Program Time (After First Byte)
2.5
0.6
50
tPP
tSE
Page Programming Time
Sector Erase Time (4K Bytes)
200/300(1) ms
tBE1 Block Erase Time (32K Bytes)
tBE2 Block Erase Time (64K Bytes)
0.15
0.25
15
0.8/1.6(2)
1.2/2.0(3)
30
s
s
s
tCE
Chip Erase Time (GD25Q32C)
Note:
(1). Max Value 4KB tSE with<50K cycles is 200ms and >50K & <100k cycles is 300ms.
(2). Max Value 32KB tBE with<50K cycles is 0.8s and >50K & <100k cycles is 1.6s.
(3). Max Value 64KB tBE with<50K cycles is 1.2s and >50K & <100k cycles is 2.0s.
Rev.1.0
50 - 46