Single P-channel MOSFET
ELM33415CA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
Ciss
Coss Vgs=0V, Vds=-10V, f=1MHz
Crss
Qg
Qgs
Qgd
td(on)
tr
tf
trr
Qrr
Vgs=-4.5V, Vds=-10V
Id=-3.5A
Vgs=-4.5V, Vds=-10V
1180
185
117
16.7
1.8
4.6
20
36
45
62
30
14
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
2
2
2
2
2
2
2
Symbol
Condition
Min.
-20
-1
-10
±100
-0.45 -0.60 -0.90
-21
40
48
60
17
-1.3
-3.5
51
61
71
Ta=25°C
Typ. Max. Unit Note
V
μA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
1
1
1
1
BVdss Vgs=0V, Id=-250μA
Idss
Igss
Vds=-16V, Vgs=0V
Vds=-10V, Vgs=0V, Tj=70°C
Vds=0V, Vgs=±8V
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-4.5V, Vds=-5V
Vgs=-4.5V, Id=-3.5A
Rds(on) Vgs=-2.5V, Id=-3.5A
Vgs=-1.8V, Id=-2.0A
Gfs
Vsd
Is
Vds=-5V, Id=-3.5A
If=-3.5A, Vgs=0V
td(off) Id≈-3.5A, Rgen=3.3Ω
If=-3.5A, dl/dt=100A/μs
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
ELM-TECH [ ELM Technology Corporation ]
