Single P-channel MOSFET
ELM33415CA-S
■General description
■Features
ELM33415CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
• Vds=-20V
• Id=-3.5A
• Rds(on) < 51mΩ (Vgs=-4.5V)
• Rds(on) < 61mΩ (Vgs=-2.5V)
• Rds(on) < 71mΩ (Vgs=-1.8V)
■Maximum absolute ratings
Parameter
Symbol
Limit
-20
Unit
V
Note
Drain-source voltage
Gate-source voltage
Vds
Vgs
±8
V
Ta=25°C
Ta=70°C
-3.5
Continuous drain current
Pulsed drain current
Id
Idm
A
A
-2.8
-21
3
Ta=25°C
Ta=70°C
1.0
Power dissipation
Pd
W
°C
0.6
Junction and storage temperature range
Tj, Tstg
-55 to 150
■Thermal characteristics
Parameter
Symbol
Rθja
Typ.
Max.
Unit
°C/W
Note
Maximum junction-to-ambient
120
■Pin configuration
■Circuit
D
SOT-23(TOP VIEW)
3
Pin No.
Pin name
GATE
1
2
3
SOURCE
DRAIN
G
1
2
S
4 - 1
ELM-TECH [ ELM Technology Corporation ]
