Single P-channel MOSFET
ELM33415CA-S
■General description
ELM33415CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
•
•
•
•
•
Vds=-20V
Id=-3.5A
Rds(on) < 51mΩ (Vgs=-4.5V)
Rds(on) < 61mΩ (Vgs=-2.5V)
Rds(on) < 71mΩ (Vgs=-1.8V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
Ta=25°C
Ta=70°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
-20
±8
-3.5
-2.8
-21
1.0
0.6
-55 to 150
Unit
V
V
A
A
W
°C
3
Note
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Rθja
Typ.
Max.
120
Unit
°C/W
Note
■Pin configuration
SOT-23(TOP VIEW)
3
■Circuit
D
Pin No.
1
2
2
Pin name
GATE
SOURCE
DRAIN
1
3
G
S
4-1