EL2001C
Low Power 70 MHz Buffer Amplifier
Electrical Characteristics
V
S
e
g
15V
Parameter
Description
V
in
A
V1
Voltage Gain
g
12V
R
S
e
50X unless otherwise specified
Limits
Min
0 990
0 985
0 83
0 80
0 82
0 79
g
10
g
9 5
g
11
Contd
EL2001AC
EL2001C
Max
Test
Level
I
III
V V
V V
V V
V V
V V
V V
V
V
X
X
mA
mA
mA
mA
dB
dB
TD is 4 2in
ns
ns
V
ms
Test Conditions
Load
%
Temp
25 C
T
MIN
T
MAX
A
V2
Voltage Gain
g
10V
Units
Typ
0 998
100X
25 C
T
MIN
T
MAX
0 93
I
III
A
V3
Voltage Gain
with V
S
e
g
5V
Output Voltage
Swing
Output Resistance
g
3V
100X
25 C
T
MIN
T
MAX
0 89
I
III
I
III
V
O
g
12V
100X
25 C
T
MIN
T
MAX
R
OUT
g
2V
100X
25 C
T
MIN
T
MAX
10
15
18
I
III
I
III
I
OUT
Output Current
g
12V
(Note 4)
25 C
T
MIN
T
MAX
g
100
g
95
g
160
I
S
Supply Current
0
%
25 C
T
MIN
T
MAX
13
20
25
I
III
I
III
PSRR
Supply Rejection
(Note 5)
Rise Time
Propagation Delay
Slew Rate (Note 6)
0
0 5V
0 5V
g
10V
%
25 C
T
MIN
T
MAX
60
50
75
t
r
t
d
SR
100X
100X
100X
25 C
25 C
25 C
1200
42
20
2000
V
V
IV
Note 1 If the input exceeds the ratings shown (or the supplies) or if the input to output voltage exceeds
g
7 5V then the input
current must be limited to
g
50 mA See the applications section for more information
Note 2 The maximum power dissipation depends on package type ambient temperature and heat sinking See the characteristic
curves for more details
Note 3 A heat sink is required to keep the junction temperature below the absolute maximum when the output is short circuited
Note 4 Force the input to
a
12V and the output to
a
10V and measure the output current Repeat with
b
12 V
IN
and
b
10V on the
output
Note 5 V
OS
is measured at V
S
a e a
4 5V V
S
b e b
4 5V and at V
S
a e a
18V V
S
b e b
18V Both supplies are changed
simultaneously
Note 6 Slew rate is measured between V
OUT
e a
5V and
b
5V
3
ELANTEC [ ELANTEC SEMICONDUCTOR ]
