TABLE I. Electrical performance characteristics – Continued.
Conditions 1/
-55°C ≤ T ≤ +125°C
Group A
subgroups
Device
type
Limits
Max
Unit
A
Test
Symbol
unless otherwise specified
Min
Rise time 2/ 5/
Fall time 2/ 5/
Overshoot 2/
9
9
9
All
All
All
10
10
50
50
ns
t
V
= 0 V to +200 mV,
R
F
OUT
T = +25°C
A
ns
%
t
V
OUT
= 0 V to -200 mV,
T = +25°C
A
+OS
-OS
V
OUT
= 0 V to +200 mV,
T = +25°C
A
V
OUT
= 0 V to -200 mV,
T = +25°C
A
1/ For all tests, unless otherwise specified, +V = +15 V, -V = -15 V, and C ≤ 10 pF. Unless otherwise specified,
S
S
L
for dc tests, R = 100 Ω, R = 100 kΩ, V
= 0 V, and for ac tests, A = +10 V/V.
V
S
L
OUT
2/ If not tested, shall be guaranteed to the limits specified in table I herein.
3/ Quiescent power consumption based on quiescent supply current test maximum (no load on outputs).
4/ Full power bandwidth = SR / ( 2 x π x V
).
PEAK
5/ Rise and fall times measured between 10 percent and 90 percent point.
SIZE
STANDARD
MICROCIRCUIT DRAWING
5962-87787
A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
SHEET
A
8
DSCC FORM 2234
APR 97
ELANTEC [ ELANTEC SEMICONDUCTOR ]
