MP02 XX 130 Series
SURGE RATINGS - PER ARM
Parameter
Units
Symbol
Conditions
Max.
2200
A
VR = 0
10ms half sine;
IFSM
Surge (non-repetitive) on-state current
I2t for fusing
Tj = 150oC
VR = 50% VRRM
VR = 0
1760
A
24200
A2s
10ms half sine;
Tj = 150oC
I2t
VR = 50% VRRM
15490
A2s
THERMAL & MECHANICAL RATINGS
Parameter
Max.
0.37
0.38
0.39
Symbol
Conditions
Units
oC/W
dc
Thermal resistance - junction to case
per Diode
Rth(j-c)
halfwave
oC/W
oC/W
3 phase
Mounting torque = 6Nm
with mounting compound
Thermal resistance - case to heatsink
per Diode
oC/W
Rth(c-hs)
0.07
Tvj
150
oC
oC
Virtual junction temperature
Storage temperature range
Tsto
-40 to 150
Commoned terminals to base plate
AC RMS, 1min, 50Hz
2.5
kV
Visol
Isolation voltage
CHARACTERISTICS
Symbol
Parameter
Conditions
Max.
Units
At 300A , Tcase = 25oC
1.53
V
VFM
IRM
VTO
rT
Forward voltage
Peak reverse current
At VRRM, Tj = 150oC
At Tvj = 150oC
mA
V
30
Threshold voltage
1.10
1.30
On-state slope resistance
At Tvj = 150oC
mΩ
2/9
DYNEX [ Dynex Semiconductor ]
