GDU 90 20722
TIMING CHARACTERISTICS
Conditions
Typ.
Units
Symbol
Parameter
Min.
Max.
No response pulse width of
input signal
t1*†
Adjustable by R81 + R82
2
3
µs
-
Delay time emitter
current to receiver o/p
t2
0.4
5.2
0.8
6.2
µs
-
-
-
Turn-on delay emitter
current to 10% IFGM
t3*†
t4
µs
µs
µs
µs
µs
-
25
-
IFGM pulse width
-
-
-
Minimum on time
10% IFGM to 90% IG(ON)
t5*
t6
Adjustable by R37
80
110
Receiver storage time
0.5
1.5
0.9
2.3
-
-
-
Turn-off delay.
Emitter current to 90% IG(ON)
t7
-
Minimum off time
90% IG(ON) to 10% IFGM
Adjustable by R38
80
110
µs
t8*
t9
-
Delay time
Gate volts to o/p emitter current
0.1
0.7
0.11
0.81
µs
µs
µs
µs
-
-
-
-
-
-
-
-
-
Turn-off delay
Gate volts to test receiver o/p
t10
t11
t12
-
Storage time
Gate volts to o/p emitter current
Measured at low IGQM
Measured at low IGQM
Turn-on delay
Gate volts to test receiver o/p
* t1,t3,t5,t8 are factory settings.
† Adjustment of t1 alters t3.
1. Varies with IGQM due to gate lead impedance.
t
1
Test circuit
t
2
emitter current
t
6
Control card
receiver output
10µs
10%
t
7
dI /dt
FG
90% I
Gate current
G(ON)
t
4
Q
GQT
t
3
t
5
Min. ON time
dI /dt
GQ
t
8
Min. OFF
-8V
0V
-8V
Gate voltage
Control card emitter current
t
t
11
9
t
t
12
10
Test circuit receiver output
2/4
DYNEX [ Dynex Semiconductor ]
