GDU 90 20722
GDU 90-20722
Gate Drive Unit
Replaces March 1998 version, DS4568-3.1
DS4568-4.0 January 2000
This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.
KEY PARAMETERS
APPLICATIONS
IFGM
IG(ON)
dIGQ/dt
40A
10A
50A/µs
■ Used with Gate Turn-Off Thyristors in high current switching
applications
CONDITIONS - (UNLESS STATED OTHERWISE)
V1 = +5V
Test circuit GTO
V2 = +15V
DG858BW
V3 = -15V
GDU connection to GTO
500mm CO - AX cable type RC5327230
(2 cables in parallel)
Test circuit emitter and gate drive emitter
Test circuit emitter current
Honeywell sweetspot HFE 4020 - 013
30mA
Test circuit receiver and gate drive receiver
Honeywell sweetspot HFD 3029 - 002
ELECTRICAL CHARACTERISTICS
Min.
Symbol
Parameter
+5V PSU current
Conditions
Typ.
Max. Units
IV1
500Hz, 50% duty cycle
5.5
A
A
-
-
-
-
IV2
IV3
+15V PSU current
-15V PSU current
500Hz
0.70
500Hz, IT = 3000A
GTO Tj= 125˚C
12
A
-
-
-
V1(Min)
V2(Min)
V3(Min)
IFGM
+5V PSU minimum
3.8
V
V
-
-
-
-
-
-
-
-
+15V PSU minimum
14.0
14.0
-
-
-15V PSU minimum
V
-
-
Peak forward gate current
On-state gate current
A
-
-
-
40
-
IG(ON)
10
40
50
A
Measured 10 - 75% IFGM
IT = 3000A, 90% IG(ON) - 50% IGQM
A/µs
A/µs
dIFG/dt
dIGQ/dt
Rate of rise of positive gate current
Rate of rise of negative gate current
-
-
1/4
DYNEX [ Dynex Semiconductor ]
