DF685
SURGE RATINGS
Conditions
Symbol
Parameter
Max.
Units
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
4.5
kA
10ms half sine; with 0% VRRM, Tj = 150oC
101.25x103 A2s
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
3.6
kA
A2s
kA
10ms half sine; with 50% VRRM, Tj = 150oC
10ms half sine; with 100% VRRM, Tj = 150oC
64.8x103
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
-
-
A2s
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max. Units
0.045 oC/W
0.086 oC/W
Parameter
Symbol
dc
Double side cooled
-
-
Rth(j-c)
Anode dc
Thermal resistance - junction to case
Single side cooled
-
-
-
0.095 oC/W
Cathode dc
oC/W
oC/W
Double side
0.01
0.02
Clamping force 10kN
with mounting compound
Thermal resistance - case to heatsink
Rth(c-h)
Single side
oC
oC
kN
Tvj
Tstg
-
On-state (conducting)
-
150
150
11.0
Virtual junction temperature
Storage temperature range
-55
9.0
Clamping force
CHARACTERISTICS
Symbol
Typ.
Units
Parameter
Conditions
At 1500A peak, Tcase = 25oC
At VRRM, Tcase = 150oC
Max.
4.8
80
VFM
IRRM
trr
Forward voltage
Peak reverse current
-
-
V
mA
Reverse recovery time
5
-
µs
QRA1
IRM
K
Recovered charge (50% chord)
Reverse recovery current
Soft factor
IF = 1000A, diRR/dt = 100A/µs
-
650
µC
A
Tcase = 150oC, VR = 100V
270
1.8
-
-
-
VTO
rT
Threshold voltage
At Tvj = 150oC
-
-
-
2.0
1.76
220
V
mΩ
V
Slope resistance
At Tvj = 150oC
VFRM
Forward recovery voltage
di/dt = 1000A/µs, Tj = 125oC
2/8
DYNEX [ Dynex Semiconductor ]
