TIP31C 参数 Datasheet PDF下载

TIP31 ... TIP31C

Characteristics (T

j

= 25°C)

Min.

Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom

V

CE

= 30 V (B open)

V

CE

= 60 V (B open)

V

CE

= 40 V (B-E short)

V

CE

= 60 V (B-E short)

V

CE

= 80 V (B-E short)

V

CE

= 100 V (B-E short)

Emitter-Base cutoff current

V

EB

= 5 V, (C open)

Gain-Bandwidth Product – Transitfrequenz

V

CE

= 10 V, I

C

= 0.5 A, f = 1 MHz

Small signal current gain – Kleinsignal-Stromverstärkung

V

CE

= 10 V, I

C

= 0.5 A, f = 1 kHz

V

CE

= 10 V, I

C

= 0.5 A, f = 1 MHz

Switching times – Schaltzeiten (between 10% and 90% levels)

turn-on time

turn-off time

I

Con

= 1 A

I

Bon

= - I

Boff

= 100 mA

t

on

t

off

R

thA

R

thC

M4

–

–

300 ns

1 µs

< 63 K/W

1

)

< 3 K/W

9 ± 10% lb.in.

1 ± 10% Nm

TIP32 ... TIP32C

–

–

h

fe

h

fe

20

3

–

–

–

–

f

T

3 MHz

–

–

I

EB0

–

–

1 mA

TIP31

TIP31A

TIP31B

TIP31C

TIP31

TIP31A

TIP31B

TIP31C

I

CE0

I

CE0

I

CE0

I

CE0

I

CES

I

CES

I

CES

I

CES

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

300 nA

300 nA

300 nA

300 nA

200 nA

200 nA

200 nA

200 nA

Kennwerte (T

j

= 25°C)

Typ.

Max.

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Thermal resistance junction to case

Wärmewiderstand Sperrschicht – Gehäuse

Admissible torque for mounting

Zulässiges Anzugsdrehmoment

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

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Valid, if leads are kept at ambient temperature at a distance of 5 mm from case

Gültig wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

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© Diotec Semiconductor AG

2