TIP125 ... TIP127
Characteristics (T
j
= 25°C)
Min.
Collector-Emitter saturation volt. – Kollektor-Emitter-Sättigungsspg.
2
)
- I
C
= 3 A, I
B
= 12 mA
- I
C
= 5 A, I
B
= 20 mA
Base-Emitter voltage – Basis-Emitter-Spannung
2
)
- I
C
= 3 A, - V
CE
= 3 V
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
- V
CE
= 30 V, (B open)
- V
CE
= 40 V, (B open)
- V
CE
= 50 V, (B open)
- V
CB
= 60 V, (E open)
- V
CB
= 80 V, (E open)
- V
CB
= 100 V, (E open)
- V
CB
= 10 V, I
E
= i
e
= 0, f = 100 kHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
Admissible torque for mounting
Zulässiges Anzugsdrehmoment
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Equivalent Circuit – Ersatzschaltbild
T
1
T
2
Kennwerte (T
j
= 25°C)
Typ.
–
–
–
–
–
–
–
–
–
–
< 63 K/W
1
)
< 3 K/W
9 ± 10% lb.in.
1 ± 10% Nm
TIP120 ... TIP122
C2
Max.
2V
4V
2.5 V
500 nA
500 nA
500 nA
200 nA
200 nA
200 nA
200 pF
- V
CEsat
- V
CEsat
- V
BE
TIP125
TIP126
TIP127
TIP125
TIP126
TIP127
- I
CEO
- I
CEO
- I
CEO
- I
CBO
- I
CBO
- I
CBO
C
CB0
R
thA
R
thC
M4
–
–
–
–
–
–
–
–
–
–
Collector-Base cutoff current – Kollektor-Basis-Reststrom
Collector-Base Capacitance – Kollektor-Basis-Kapazität
E
B
C
B1
T1
T2
E2
2
1
Tested with pulses t
p
= 300 µs, duty cycle
≤
2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis
≤
2%
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
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2
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