Darlington Transistors
BCV26, BCV46
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
Base saturation voltage – Basis-Sättigungsspannung 1)
- IC = 100 mA, - IB = 0.1 mA
VBEsat
–
–
1.5 V
DC current gain – Kollektor-Basis-Stromverhältnis 1)
BCV26
BCV46
hFE
hFE
4000
2000
–
–
–
–
- VCE = 5 V, - IC = 1 mA
- VCE = 5 V, - IC = 10 mA
- VCE = 5 V, - IC = 100 mA
BCV26
BCV46
hFE
hFE
10000
4000
–
–
–
–
BCV26
BCV46
hFE
hFE
20000
10000
–
–
–
–
Base-Emitter voltage – Basis-Emitter-Spannung 1)
- VCE = 5 V, - IC = 10 mA
- VBEon
–
–
1.4 V
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
fT
–
220 MHz
–
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
420 K/W 2)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BCV27, BCV47
Marking – Stempelung
BCV26 = FD
BCV46 = FE
Pinning – Anschlußbelegung
3
3
T1
T2
1
2
1
2
1
2
)
)
Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
7
DIOTEC [ DIOTEC SEMICONDUCTOR ]
