BCV26, BCV46
PNP
Darlington Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Version 2004-01-20
Power dissipation – Verlustleistung
250 mW
2.9±0.1
Plastic case
Kunststoffgehäuse
SOT-23
(TO-236)
1.1
0.4
3
Type
Code
Weight approx. – Gewicht ca.
0.01 g
2
1
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1.9
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions / Maße in mm
1 = B1 2 = E2 3 = C
Maximum ratings (TA = 25/C)
Grenzwerte (TA = 25/C)
BCV26
BCV46
60 V
Collector-Emitter-voltage
VBE = 0
E open
C open
- VCES
- VCB0
- VEB0
Ptot
30 V
40 V
Collector-Base-voltage
80 V
Emitter-Base-voltage
10 V
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
250 mW 1)
500 mA
800 mA
100 mA
150/C
- IC
Peak Collector current – Kollektor-Spitzenstrom - ICM
Base current – Basisstrom (dc)
- IB
Tj
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
TS
- 65…+ 150/C
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 30 V
IE = 0, - VCB = 60 V
BCV26
BCV46
- ICB0
- ICB0
–
–
–
–
100 nA
100 nA
Emitter-Base cutoff current – Emitterreststrom
IC = 0, - VEB = 10 V
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
- IEB0
–
–
–
–
100 nA
1 V
- IC = 100 mA, - IB = 0.1 mA
- VCEsat
1
2
)
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
6
DIOTEC [ DIOTEC SEMICONDUCTOR ]
