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FZT955TA 参数 Datasheet PDF下载

FZT955TA图片预览
型号: FZT955TA
PDF下载: 下载PDF文件 查看货源
内容描述: SOT223 PNP硅平面高电流(高性能)晶体管 [SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS]
分类和应用: 晶体晶体管局域网
文件页数/大小: 5 页 / 224 K
品牌: DIODES [ DIODES INCORPORATED ]
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FZT956
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
SYMBOL
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN.
-220
-220
-200
-6
TYP.
-300
-300
-240
-8
-50
-1
-50
-1
-10
-30
-120
-168
-970
-810
100
100
50
200
200
150
10
110
32
67
1140
-50
-165
-275
-1110
-950
MAX. UNIT CONDITIONS.
V
V
V
V
nA
I
C
=-100
µ
A
I
C
=-1
µ
A, RB
1k
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-200V
V
CB
=-200V,T
amb
=100°C
V
CB
=-200V
V
CB
=-200V,T
amb
=100°C
V
EB
=-6V
I
C
=-100mA,I
B
=-10mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-400mA*
I
C
=-2A, I
B
=-400mA
I
C
=-2A, V
CE
=-5V*
I
C
=-10mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-2A, V
CE
=-5V*
I
C
=-5A, V
CE
=-5V*
MHz
pF
ns
ns
I
C
=-100mA, V
CE
=-10V
f=50MHz
V
CB
=-20V, f=1MHz
I
C
=-1A, I
B1
=-100mA
I
B2
=100mA, V
CC
=-50V
µ
A
Collector Cut-Off Current
I
CER
R
1k
I
EBO
V
CE(sat)
µ
A
nA
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer Ratio
nA
mV
mV
mV
mV
mV
V
BE(sat)
V
BE(on)
h
FE
300
Transition Frequency
Output Capacitance
Switching Times
f
T
C
obo
t
on
t
off
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
Spice parameter data is available upon request for this device
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