SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 3 – MARCH 2005
FEATURES
* 4 Amps continuous current (10 Amps peak current)
* Very low saturation voltages
* Excellent gain characteristics specified up to 3 Amps
PARTMARKING DETAILS –
DEVICE TYPE IN FULL
COMPLEMENTARY TYPES – FZT955 - FZT855
FZT956 - N/A
FZT955
FZT956
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
-10
-4
3
-55 to +150
FZT955
-180
-140
-6
-5
-2
FZT956
-220
-200
UNIT
V
V
V
A
A
W
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
3 - 284
DIODES [ DIODES INCORPORATED ]
