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DMG2301U 参数 Datasheet PDF下载

DMG2301U图片预览
型号: DMG2301U
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型MOSFET [P-CHANNEL ENHANCEMENT MODE MOSFET]
分类和应用:
文件页数/大小: 6 页 / 143 K
品牌: DIODES [ DIODES INCORPORATED ]
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DMG2301U
0.25
0.16
V
GS
= -4.5V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.20
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.12
0.15
T
A
= 150°C
0.08
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
0.10
V
GS
= -1.8V
V
GS
= -2.5V
NEW PRODUCT
0.04
0.05
T
A
= -55°C
V
GS
= -4.5V
0
0.1
1
-I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
10
0
0
4
6
8
-I
D
, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
2
10
1.7
1.5
0.16
R
DSON
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.3
R
DSON
, DRAIN-SOURCE
ON-RESISTANCE (
Ω
)
V
GS
= -2.5V
I
D
= -5A
0.12
1.1
V
GS
= -5V
I
D
= -10A
0.08
V
GS
= -2.5V
I
D
= -5.5A
0.9
0.04
V
GS
= -5V
I
D
= -10A
0.7
0.5
-50
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
10
1.6
-V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
1.2
-I
S
, SOURCE CURRENT (A)
8
6
T
A
= 25°C
0.8
I
D
= -1mA
4
I
D
= -250µA
0.4
2
0
-50 -25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1.0
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
DMG2301U
Document number: DS31848 Rev. 1 - 2
3 of 6
June 2009
© Diodes Incorporated