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DMG2301U 参数 Datasheet PDF下载

DMG2301U图片预览
型号: DMG2301U
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型MOSFET [P-CHANNEL ENHANCEMENT MODE MOSFET]
分类和应用:
文件页数/大小: 6 页 / 143 K
品牌: DIODES [ DIODES INCORPORATED ]
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DMG2301U
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Drain
NEW PRODUCT
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
D
Gate
Source
G
TOP VIEW
S
TOP VIEW
Internal Schematic
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
V
DSS
V
GSS
T
A
= 25°C
T
A
= 70°C
I
D
I
DM
Value
-20
±8
-2.5
-2.0
-27
Units
V
V
A
A
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 4)
Steady
State
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T
A
= 25°C
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
θJA
T
J,
T
STG
Value
0.8
157
-55 to +150
Unit
W
°C/W
°C
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
DMG2301U
Document number: DS31848 Rev. 1 - 2
1 of 6
June 2009
© Diodes Incorporated