DMG1012UW
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
20
-
-
0.5
-
-
Typ
-
-
-
-
0.3
0.4
0.5
1.4
0.7
60.67
9.68
5.37
736.6
93.6
116.6
5.1
7.4
26.7
12.3
Max
-
100
±1.0
1.0
0.45
0.6
0.75
-
1.2
-
-
-
-
-
-
-
-
-
-
Unit
V
nA
μA
V
Ω
S
V
pF
pF
pF
pC
pC
pC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±4.5V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 600mA
V
GS
= 2.5V, I
D
= 500mA
V
GS
= 1.8V, I
D
= 350mA
V
DS
= 10V, I
D
= 400mA
V
GS
= 0V, I
S
= 150mA
V
DS
= 16V, V
GS
= 0V,
f = 1.0MHz
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 47Ω, R
G
= 10Ω,
I
D
= 200mA
NEW PRODUCT
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
-
-
-
-
-
-
-
-
-
-
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
1.5
V
GS
= 8.0V
V
GS
= 4.5V
1.5
1.2
I
D
, DRAIN CURRENT (A)
V
GS
= 3.0V
V
GS
= 2.5V
1.2
I
D
, DRAIN CURRENT (A)
V
DS
= 5V
0.9
V
GS
= 2.0V
0.9
0.6
V
GS
= 1.5V
0.6
T
A
= 150°C
0.3
0.3
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0
0
V
GS
= 1.2V
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
5
0
0.5
1
1.5
2
2.5
V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
3
DMG1012UW
Document number: DS31859 Rev. 3 - 2
2 of 6
October 2009
© Diodes Incorporated
DIODES [ DIODES INCORPORATED ]
