DMG1012UW
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
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Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
ESD Protected Up To 2KV
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
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Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.006 grams (approximate)
Drain
NEW PRODUCT
D
Gate
ESD PROTECTED TO 2kV
TOP VIEW
Gate
Protection
Diode
Source
G
TOP VIEW
S
EQUIVALENT CIRCUIT
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
V
DSS
V
GSS
Steady
State
T
A
= 25°C
T
A
= 85°C
I
D
I
DM
Value
20
±6
1.0
0.64
6
Unit
V
V
A
A
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 4)
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 3)
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
θJA
T
J
,
T
STG
Max
0.29
425
-55 to +150
Unit
W
°C/W
°C
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
DMG1012UW
Document number: DS31859 Rev. 3 - 2
1 of 6
October 2009
© Diodes Incorporated
DIODES [ DIODES INCORPORATED ]
