Electrical Characteristics N-CHANNEL - Q
1
, 2N7002 Section
@ T
A
= 25°C unless otherwise specified
Unit
V
µA
nA
V
W
A
mS
pF
pF
pF
ns
ns
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150W, V
GEN
= 10V,
R
GEN
= 25W
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Test Condition
V
GS
= 0V, I
D
= 10mA
V
DS
= 60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250mA
V
GS
= 5.0V, I
D
= 0.05A
V
GS
= 10V, I
D
= 0.5A
V
GS
= 10V, V
DS
= 7.5V
V
DS
=10V, I
D
= 0.2A
NEW PRODUCT
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
@ T
j
= 25°C
@ T
j
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
I
D(ON)
g
FS
C
iss
C
oss
C
rss
t
D(ON)
t
D(OFF)
Min
60
¾
¾
1.0
¾
0.5
80
¾
¾
¾
¾
¾
Typ
70
¾
¾
¾
3.2
4.4
1.0
¾
22
11
2.0
7.0
11
Max
¾
1.0
500
±10
2.5
7.5
13.5
¾
¾
50
25
5.0
20
20
Electrical Characteristics P-CHANNEL - Q
2
, BSS84 Section
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
t
D(ON)
t
D(OFF)
¾
¾
10
18
¾
¾
C
iss
C
oss
C
rss
¾
¾
¾
¾
¾
¾
45
25
12
V
GS(th)
R
DS (ON)
g
FS
-0.8
¾
.05
¾
¾
¾
-2.0
10
¾
BV
DSS
I
DSS
I
GSS
-50
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
-15
-60
-100
±10
Symbol
Min
Typ
Max
@ T
A
= 25°C unless otherwise specified
Unit
V
µA
µA
nA
nA
V
W
S
pF
pF
pF
ns
ns
V
DD
= -30V, I
D
= -0.27A,
R
GEN
= 50W, V
GS
= -10V
V
DS
= -25V, V
GS
= 0V
f = 1.0MHz
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -50V, V
GS
= 0V, T
J
= 25°C
V
DS
= -50V, V
GS
= 0V, T
J
= 125°C
V
DS
= -25V, V
GS
= 0V, T
J
= 25°C
V
GS
=
±20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -1mA
V
GS
= -5V, I
D
= -0.100A
V
DS
= -25V, I
D
= -0.1A
Note: 3. Short duration test pulse used to minimize self-heating effect.
DS30380 Rev. 7 - 2
2 of 5
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DIODES [ DIODES INCORPORATED ]
