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BSS8402DW-13 参数 Datasheet PDF下载

BSS8402DW-13图片预览
型号: BSS8402DW-13
PDF下载: 下载PDF文件 查看货源
内容描述: [Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTC PACKAGE-6]
分类和应用: 开关光电二极管晶体管
文件页数/大小: 5 页 / 132 K
品牌: DIODES [ DIODES INCORPORATED ]
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SPICE MODEL: BSS8402DW
BSS8402DW
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD
EFFECT TRANSISTOR
Features
NEW PRODUCT
·
·
·
·
·
·
·
Low On-Resistance: R
DS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair
Available in Lead Free/RoHS Compliant Version (Note 2)
S
1
G
1
D
2
D
1
A
G
2
S
2
SOT-363
Dim
A
B C
Min
0.10
1.15
2.00
0.30
1.80
¾
0.90
0.25
0.10
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
B
C
D
F
M
Mechanical Data
·
·
·
·
·
·
·
·
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 5
Terminal Connections: See Diagram
Marking: KNP (See Page 5)
Weight: 0.008 grams (approx.)
S
1
G
H
K
0.65 Nominal
H
J
K
L
M
a
J
D
F
L
TOP VIEW
D
1
G
2
S
2
Q
1
Q
2
All Dimensions in mm
G
1
D
2
Maximum Ratings - Total Device
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
@ T
A
= 25°C unless otherwise specified
Symbol
P
d
R
qJA
T
j
, T
STG
Value
200
625
-55 to +150
Units
mW
°C/W
°C
Maximum Ratings N-CHANNEL - Q
1
, 2N7002 Section
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R
GS
£
1.0MW
Gate-Source Voltage
Drain Current (Note 1)
Continuous
Pulsed
Continuous
Continuous @ 100°C
Pulsed
Symbol
V
DSS
V
DGR
V
GSS
I
D
@ T
A
= 25°C unless otherwise specified
Value
60
60
±20
±40
115
73
800
@ T
A
= 25°C unless otherwise specified
Value
-50
-50
±20
-130
Units
V
V
V
mA
Units
V
V
V
mA
Maximum Ratings P-CHANNEL - Q
2
, BSS84 Section
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R
GS
£
20KW
Gate-Source Voltage
Drain Current (Note 1)
Continuous
Continuous
Symbol
V
DSS
V
DGR
V
GSS
I
D
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30380 Rev. 7 - 2
1 of 5
www.diodes.com
BSS8402DW
ã
Diodes Incorporated