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BSS123-7 参数 Datasheet PDF下载

BSS123-7图片预览
型号: BSS123-7
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR]
分类和应用: 晶体小信号场效应晶体管开关光电二极管
文件页数/大小: 3 页 / 68 K
品牌: DIODES [ DIODES INCORPORATED ]
 浏览型号BSS123-7的Datasheet PDF文件第1页浏览型号BSS123-7的Datasheet PDF文件第2页  
V
GS(th),
NORMALIZED THRESHOLD VOLTAGE
1.2
2.2
R
DS(ON),
NORMALIZED ON-RESISTANCE
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 -25
0
25
50
75
100 125 150
NEW PRODUCT
1.1
V
GS
= 10V
I
D
= 170m
1
0.9
0.8
0.7
T
J
, JUNCTION TEMPERATURE (ºC)
Fig. 3 Gate Threshold Variation with Temperature
50
f = 1.0MHz
-50
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (ºC)
Fig. 4 On-Resistance Variation with Temperature
250
P
D
, POWER DISSIPATION (mW)
40
C, CAPACITANCE (pF)
200
30
150
20
Ciss
100
10
50
Coss
Crss
0
0
10
20
15
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 5 Typical Capacitance
5
25
0
0
100
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 6 Power Derating Curve, Total Package
200
Ordering Information
(Note 3)
Device
BSS123W-7
Notes:
Packaging
SOT-323
Shipping
3000/Tape & Reel
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K23
Date Code Key
Year
Code
Month
Code
Jan
1
2002
N
Feb
2
March
3
2003
P
Apr
4
K23 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
YM
2004
R
May
5
Jun
6
2005
S
Jul
7
2006
T
Aug
8
2007
U
Sep
9
Oct
O
2008
V
Nov
N
2009
W
Dec
D
DS30368 Rev. 2 - 2
3 of 3
www.diodes.com
BSS123W