BSS123W
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
·
·
·
·
·
·
·
·
·
·
·
·
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
High Drain-Source Voltage Rating
G
G
H
K
M
A
D
B
NEW PRODUCT
SOT-323
Dim
A
C
Min
0.25
1.15
2.00
0.30
1.20
1.80
0.0
0.90
0.25
0.10
0°
Max
0.40
1.35
2.20
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8°
B
C
D
E
G
H
J
K
L
M
a
Mechanical Data
Case: SOT-323, Molded Plastic
Plastic Material - UL Flammability Classification
Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K23 (See Page 3)
Weight: 0.006 grams (approx.)
S
0.65 Nominal
J
D
E
Drain
L
Gate
All Dimensions in mm
Source
Maximum Ratings
Drain-Source Voltage
@ T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
DGR
Continuous
Continuous
Pulsed
V
GSS
I
D
I
DM
P
d
R
qJA
T
j
, T
STG
Value
100
100
±20
170
680
200
625
-55 to +150
Units
V
V
V
mA
mW
°C/W
°C
Characteristic
Drain-Gate Voltage R
GS
£
20KW
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
DS30368 Rev. 2 - 2
1 of 3
www.diodes.com
BSS123W
DIODES [ DIODES INCORPORATED ]
