400
See Note 1
1000
f
T
, GAIN BANDWIDTH PRODUCT (MHz)
T
A
= 25°C
f = 20MHz
P
d
, POWER DISSIPATION (mW)
300
V
CE
= 5V
200
100
1V
100
0
0
100
T
SB
, SUBSTRATE TEMPERATURE (°C)
Fig. 1, Power Derating Curve
200
10
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Fig. 2, Gain-Bandwidth Product vs Collector Current
1000
V
CE
= 1V
0.5
V
CE(SAT)
, COLLECTOR SATURATION VOLTAGE (V)
typical
limits
at T
A
= 25°C
0.4
h
FE
, DC CURRENT GAIN
I
C
/ I
B
= 10
150°C
T
A
= 25°C
-50°C
0.3
100
0.2
25°C
0.1
150°C
-50°C
0
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Fig. 3, Collector Sat. Voltage vs Collector Current
10
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Fig. 4, DC Current Gain vs Collector Current
100
0.35
500
3.2
2.8
2.4
I
C
, COLLECTOR CURRENT (mA)
400
I
C
, COLLECTOR CURRENT (mA)
2
1.8
1.6
1.4
1.2
80
0.3
0.25
300
60
0.2
200
0.8
0.6
40
0.15
100
0.4
0.1
20
I
B
= 0.05mA
I
B
= 0.2mA
0
0
1
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 5, Typical Emitter-Collector Characteristics
2
0
0
10
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 6, Typical Emitter-Collector Characteristics
20
DS11107 Rev. 11 - 2
2 of 3
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