SPICE MODELS: BC817-16 BC817-25 BC817-40
BC817-16 / -25 / -40
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
·
·
·
·
·
Ideally Suited for Automatic Insertion
Epitaxial Planar Die Construction
For Switching, AF Driver and Amplifier Applications
Complementary PNP Types Available (BC807)
Available in Lead Free/RoHS Compliant Version (Note 3)
A
C
B
C
SOT-23
Dim
A
B
C
D
B
TOP VIEW
E
E
D
G
H
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
Mechanical Data
·
·
·
·
·
·
·
·
·
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 3
Pin Connections: See Diagram
Marking (See Page 3): BC817-16 K6A
BC817-25 K6B
BC817-40 K6C
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
E
G
H
K
J
L
M
J
K
L
M
a
All Dimensions in mm
Maximum Ratings
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
@T
A
= 25°C unless otherwise specified
Symbol
V
CEO
V
EBO
I
C
I
CM
I
EM
P
d
R
qSB
R
qJA
T
j
, T
STG
Value
45
5.0
800
1000
1000
310
320
403
-65 to +150
Unit
V
V
mA
mA
mA
mW
°C/W
°C/W
°C
Characteristic
Power Dissipation at T
SB
= 50°C (Note 1)
Thermal Resistance, Junction to Substrate Backside (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
DC Current Gain
@T
A
= 25°C unless otherwise specified
Symbol
Min
100
160
250
60
100
170
—
—
—
—
100
—
Max
250
400
600
—
—
—
0.7
1.2
100
5.0
100
—
12
Unit
Test Condition
V
CE
= 1.0V, I
C
= 100mA
—
V
CE
= 1.0V, I
C
= 300mA
Characteristic (Note 2)
Current Gain Group -16
-25
-40
Current Gain Group -16
-25
-40
h
FE
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Notes:
V
CE(SAT)
V
BE
I
CES
I
EBO
f
T
C
CBO
V
V
nA
µA
nA
MHz
pF
I
C
= 500mA, I
B
= 50mA
V
CE
= 1.0V, I
C
= 300mA
V
CE
= 45V
V
CE
= 25V, T
j
= 150°C
V
EB
= 4.0V
V
CE
= 5.0V, I
C
= 10mA,
f = 50MHz
V
CB
= 10V, f = 1.0MHz
1. Device mounted on Ceramic Substrate 0.7mm; 2.5cm
2
area.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
DS11107 Rev. 11 - 2
1 of 3
www.diodes.com
BC817-16/-25/-40
ã
Diodes Incorporated
DIODES [ DIODES INCORPORATED ]
