BAS16 / MMBD4148 / MMBD914
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
100
V
VRM
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
75
V
RMS Reverse Voltage
53
V
VR(RMS)
IFM
Forward Continuous Current (Note 6)
Average Rectified Output Current (Note 6)
300
200
mA
mA
IO
Non-Repetitive Peak Forward Surge Current
@ t = 1.0µs
@ t = 1.0s
2.0
1.0
A
IFSM
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Symbol
Value
350
Unit
mW
°C/W
°C
PD
Thermal Resistance Junction to Ambient Air (Note 6)
Operating and Storage Temperature Range
357
R
JA
-65 to +150
TJ , TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage (Note 7)
Symbol
Min
Max
Unit
Test Condition
75
V
V(BR)R
IR = 100µA
IF = 1.0mA
IF = 10mA
IF = 50mA
IF = 150mA
0.715
0.855
1.0
Forward Voltage
V
VF
1.25
VR = 75V
1.0
50
30
25
µA
µA
µA
nA
V
R = 75V, TJ = +150°C
VR = 25V, TJ = +150°C
R = 20V
Leakage Current (Note 7)
IR
V
Total Capacitance
2.0
4.0
pF
ns
CT
trr
VR = 0, f = 1.0MHz
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100
Reverse Recovery Time
Notes:
6. Device mounted on glass epoxy PCB 1.6” x 1.6” x 0.06”; mounting pad for the cathode lead min. 0.93in2.
7. Short duration pulse test used to minimize self-heating effect.
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October 2013
© Diodes Incorporated
BAS16 / MMBD4148 / MMBD914
Document number: DS12003 Rev. 29 - 2
DIODES [ DIODES INCORPORATED ]
