74LVCE1G126
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
Electrical Characteristics
(All typical values are at Vcc = 3.3V, T
A
= 25°C)
Over recommended free-air temperature range (unless otherwise noted)
Symbol
Parameter
Test Conditions
Vcc
1.4 V to 5.5V
I
OH
= -100μA
I
OH
= -3mA
1.4 V
I
OH
= -4mA
1.65 V
High Level Output
V
OH
I
OH
= -8mA
2.3V
Voltage
I
OH
= -16mA
3V
I
OH
= -24mA
I
OH
= -32mA
4.5 V
1.4 V to 5.5V
I
OL
= 100μA
I
OL
= 3mA
1.4V
I
OL
= 4mA
1.65 V
V
OL
High-level Input Voltage I
OL
= 8mA
2.3V
I
OL
= 16mA
3V
I
OL
= 24mA
I
OL
= 32mA
4.5
I
I
Input Current
V
I
= 5.5 V or GND
0 to 5.5 V
Power Down Leakage
V
I
or V
O
= 5.5V
0
I
OFF
Current
Z State
V
O
=0 to 5.5V
3.6V
I
OZ
Leakage Current
1.4 V to 5.5V
V
I
= 5.5V of GND
I
CC
Supply Current
I
O
=0
One input at V
CC
–
3 V to 5.5V
Additional Supply
ΔI
CC
0.6 V Other inputs
Current
at V
CC
or GND
C
i
Input Capacitance
V
i
= V
CC
– or GND
3.3
SOT25
(Note 5)
Thermal Resistance
θ
JA
SOT353
(Note 5)
Junction-to-Ambient
DFN1410
(Note 5)
SOT25
(Note 5)
Thermal Resistance
(Note 5)
θ
JC
SOT353
Junction-to-Case
DFN1410
(Note 5)
Note:
NEW PRODUCT
Min
V
CC
– 0.1
1.05
1.2
1.9
2.4
2.3
3.8
Typ.
Max
Unit
V
0.1
.4
0.45
0.3
0.4
0.55
0.55
±5
± 10
10
10
500
3.5
204
371
430
52
143
190
V
μA
μA
μA
μA
μA
pF
o
C/W
o
C/W
5. Test condition for SOT25, SOT353 and DFN1410: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum
recommended pad layout.
74LVCE1G126
Document number: DS32217 Rev. 2 - 2
5 of 14
December 2010
© Diodes Incorporated
DIODES [ DIODES INCORPORATED ]
