TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
2.1
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DTU09N03
I
S
- Source Current (A)
T
J
= 150 °C
10
V
GS(th)
(V)
1.7
I
D
= 250 μA
1.3
T
J
= 25 °C
1
0.9
0.1
0.0
0.3
0.6
0.9
1.2
0.5
- 50
- 25
0
25
50
75
100
125
150
175
V
SD
- Source-to-Drain Voltage (V)
T
J
- Temperature (°C)
Source-Drain Diode Forward Voltage
3750
V
DS
- Drain-to-Source Voltage (V)
43
Threshold Voltage
3000
C - Capacitance (pF)
C
iss
41
I
D
= 250 μA
39
2250
1500
C
oss
750
C
rss
0
0
5
10
15
20
25
30
37
35
33
- 50
- 25
0
25
50
75
100
125
150
175
V
DS
- Drain-to-Source Voltage (V)
T
J
- Temperature (°C)
Capacitance
2.0
I
D
= 20 A
1.7
R
DS(on)
- On-Resistance
V
GS
= 10 V
I
D
- Drain Current (A)
Drain Source Breakdown vs. Junction Temperature
100
80
(Normalized)
1.4
V
GS
= 4.5 V
1.1
60
Package Limited
40
0.8
20
0.5
- 50
0
- 25
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
T
C
- Case Temperature (°C)
On-Resistance vs. Junction Temperature
Current Derating
4
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