TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
V
GS
= 10 V thru 4 V
R
DS(on)
- On-Resistance (Ω)
80
I
D
- Drain Current (A)
V
GS
= 3 V
0.006
V
GS
= 4.5 V
0.005
V
GS
= 10 V
0.004
0.007
www.din-tek.jp
DTU09N03
60
40
20
0
0.0
0.003
0.5
1.0
1.5
2.0
0
20
40
60
80
100
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
Drain to Source Voltage vs. I
D
5
0.015
On-Resistance vs. Drain Current
R
DS(on)
- On-Resistance (Ω)
4
I
D
- Drain Current (A)
0.012
3
T
C
= 25 °C
2
0.009
T
J
= 150 °C
0.006
T
J
= 25 °C
0.003
1
T
C
= 125 °C
0
0.0
T
C
= - 55 °C
0.6
1.2
1.8
2.4
3.0
0.000
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Transfer Characteristics
180
10
On-Resistance vs. Gate-to-Source Voltage
I
D
= 20 A
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 15 V
6
V
DS
= 8 V
4
V
DS
= 24 V
g
fs
- Transconductance (S)
135
T
C
= - 55 °C
T
C
= 25 °C
90
T
C
= 125 °C
45
2
0
0
6
12
18
24
30
0
0
10
20
30
40
50
I
D
- Drain Current (A)
Q
g
- Total Gate Charge (nC)
Transconductance
Gate Charge
3
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