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SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 3.3 A, di/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 3.3 A
- 0.8
20
20
14
6
T
C
= 25 °C
- 2.5
- 20
- 1.2
30
30
A
V
ns
nC
ns
b
DTS6503
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Test Conditions
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
- 5 V, V
GS
= - 10 V
V
GS
=
- 10 V, I
D
= - 4.1 A
V
GS
=
- 4.5 V, I
D
= - 1.0 A
V
DS
= - 15 V, I
D
= - 4.1 A
Min.
- 30
Typ.
Max.
Unit
V
- 31
4.5
- 1.0
- 3.0
± 100
-1
- 10
- 20
0.040
0.052
8
450
0.053
0.066
mV/°C
V
nA
µA
A
Ω
S
V
DS
= - 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 4.1 A
80
63
10
5.1
1.8
2.5
7
40
60
120
30
20
10
20
30
15
80
20
12
5
15
8
pF
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 15 V, R
L
= 4.6
Ω
I
D
≅
- 3.3 A, V
GEN
= - 10 V, R
g
= 1
Ω
V
DD
= - 15 V, R
L
= 4.6
Ω
I
D
≅
- 3.3 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= - 15 V, V
GS
= - 4.5 V, I
D
= - 4.1 A
nC
Ω
ns
13
20
10
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DINTEK [ DinTek Semiconductor Co,.Ltd ]
