P-Channel 30-V (D-S) MOSFET
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DTS6503
PRODUCT SUMMARY
V
DS
(V)
- 30
R
DS(on)
(Ω)
0.053 at V
GS
= - 10 V
0.066 at V
GS
= - 4.5 V
I
D
(A)
a
- 5.1
5.1 nC
- 4.1
Q
g
(Typ.)
FEATURES
•
Halogen-free According to IEC 61249-2-21
Available
•
TrenchFET
®
Power MOSFET
APPLICATIONS
• Load Switch
TSOP-6
Top V iew
1
6
(3) G
3 mm
2
5
(4) S
3
4
(1, 2, 5, 6) D
2.85 mm
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
Limit
- 30
± 20
- 5.1
- 4.1
- 4.1
b, c
- 3.3
b, c
- 20
- 2.5
- 1.67
b, c
3.0
2.0
2.0
b, c
1.3
b, c
- 55 to 150
Unit
V
A
Pulsed Drain Current
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
Maximum Power Dissipation
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
P
D
T
J
, T
stg
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
t
≤
5s
Steady State
Symbol
R
thJA
R
thJF
Typical
55
34
Maximum
62.5
41
Unit
°C/W
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 110 °C/W.
1
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