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DTP4N60_13 参数 Datasheet PDF下载

DTP4N60_13图片预览
型号: DTP4N60_13
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET降低栅极驱动要求 [Power MOSFET Reduced Gate Drive Requirement]
分类和应用: 栅极栅极驱动
文件页数/大小: 11 页 / 2101 K
品牌: DINTEK [ DinTek Semiconductor Co,.Ltd ]
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Package Information
www.din-tek.jp
TO-220 FULLPAK (HIGH VOLTAGE)
E
n
ØP
A
A1
d1
d3
D
u
L1
V
L
b3
b2
b
e
c
A2
MILLIMETERS
DIM.
A
A1
A2
b
b2
b3
c
D
d1
d3
E
e
L
L1
n
ØP
u
v
ECN: X09-0126-Rev. B, 26-Oct-09
DWG: 5972
MIN.
4.570
2.570
2.510
0.622
1.229
1.229
0.440
8.650
15.88
12.300
10.360
2.54 BSC
13.200
3.100
6.050
3.050
2.400
0.400
13.730
3.500
6.150
3.450
2.500
0.500
0.520
0.122
0.238
0.120
0.094
0.016
MAX.
4.830
2.830
2.850
0.890
1.400
1.400
0.629
9.800
16.120
12.920
10.630
MIN.
0.180
0.101
0.099
0.024
0.048
0.048
0.017
0.341
0.622
0.484
0.408
INCHES
MAX.
0.190
0.111
0.112
0.035
0.055
0.055
0.025
0.386
0.635
0.509
0.419
0.100 BSC
0.541
0.138
0.242
0.136
0.098
0.020
Notes
1. To be used only for process drawing.
2. These dimensions apply to all TO-220, FULLPAK leadframe versions 3 leads.
3. All critical dimensions should C meet C
pk
> 1.33.
4. All dimensions include burrs and plating thickness.
5. No chipping or package damage.
1