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DTP4N60_13 参数 Datasheet PDF下载

DTP4N60_13图片预览
型号: DTP4N60_13
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET降低栅极驱动要求 [Power MOSFET Reduced Gate Drive Requirement]
分类和应用: 栅极栅极驱动
文件页数/大小: 11 页 / 2101 K
品牌: DINTEK [ DinTek Semiconductor Co,.Ltd ]
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DTP4N60/DTP4N60F/DTU4N60/DTL4N60
www.din-tek.jp
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
1
I
D
, Drain Current (A)
10
0
4.5 V
I
D
, Drain Current (A)
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
Top
10
1
150
°
C
25
°
C
10
0
10
-1
20 µs Pulse Width
T
C
=
25 °C
10
-1
10
0
10
1
10
2
10
-2
10
-2
91114_01
10
-1
4
91114_03
20 µs Pulse Width
V
DS
=
100 V
5
6
7
8
9
10
V
DS
, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
V
GS,
Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
10
1
I
D
, Drain Current (A)
10
0
V
GS
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I
D
= 4 A
V
GS
= 10 V
4.5 V
10
-1
10
-2
10
-2
91114_02
20 µs Pulse Width
T
C
=
150 °C
10
-1
10
0
10
1
10
2
0.0
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
V
DS,
Drain-to-Source Voltage (V)
91114_04
T
J,
Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
3