TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
0.20
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DTM9435
0.16
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
I
D
= 5.8 A
0.12
10
T
J
= 150
°C
T
J
= 25
°C
0.08
0.04
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
150
On-Resistance vs. Gate-to-Source Voltage
0.4
V
GS(th)
Variance (V)
I
D
= 250
µA
Power (W)
0.2
120
90
0.0
60
- 0.2
30
- 0.4
- 50
- 25
0
25
50
75
100
125
150
0
10-
3
10-
2
10
-1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
10
I
D
- Drain Current (A)
1 ms
1
10 ms
100 ms
1s
10 s
DC
0.1
T
C
= 25 °C
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
DS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Foot
4
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