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SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
≤
- 10 V, V
GS
= - 10 V
V
DS
≤
- 5 V, V
GS
= - 4.5 V
V
GS
= - 10 V, I
D
= - 5.8 A
Drain-Source On-State
Resistance
b
R
DS(on)
g
fs
V
SD
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= - 1.2 A, dI/dt = 100 A/µs
V
DD
= - 15 V, R
L
= 15
Ω
I
D
≅
- 1 A, V
GEN
= - 10 V, R
g
= 6
Ω
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 3.5 A
V
GS
= - 6 V, I
D
= - 5 A
V
GS
= - 4.5 V, I
D
= - 4.4 A
Forward Transconductance
b
Diode Forward Voltage
b
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
16
2.3
4.5
8.8
14
14
42
30
30
25
25
70
50
60
ns
Ω
24
nC
V
DS
= - 15 V, I
D
= - 5.8 A
I
S
= - 2.3 A, V
GS
= 0 V
- 20
-5
0.033
0.043
0.056
13
- 0.8
- 1.1
0.042
0.055
0.060
S
V
Ω
- 1.0
- 3.0
± 100
-1
-5
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
DTM9435
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DINTEK [ DinTek Semiconductor Co,.Ltd ]
