TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
R
DS(on)
- Drain-to-Source On-Resistance (Ω)
0.08
www.din-tek.jp
DTM4964
I
D
= 4.6 A
0.07
T
J
= 150 °C
I
S
- Source Current (A)
10
0.06
125 °C
0.05
0.04
T
J
= 25 °C
0.03
25 °C
0.02
0
2
4
6
8
10
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
2.6
2.4
2.2
Power (W)
50
On-Resistance vs. Gate-to-Source Voltage
I
D
= 250
µA
40
V
GS(th)
(V)
2.0
1.8
1.6
1.4
30
20
10
1.2
1.0
- 50
- 25
0
25
50
75
100
125
150
0
10
-3
10
-2
10
-1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
100
µs
1
1 ms
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
1s
10 s
DC
100
0.01
0.1
1
10
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area
4
DINTEK [ DinTek Semiconductor Co,.Ltd ]
