N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
60
R
DS(on)
(Ω)
0.035 at V
GS
= 10 V
0.040 at V
GS
= 4.5 V
I
D
(A)
d
7.6
7.6
Q
g
(Typ.)
10.5 nC
www.din-tek.jp
DTM4964
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• Optimized for “Low Side” Synchronous
Rectifier Operation
•
100 % R
g
and UIS Tested
APPLICATIONS
D
SO-8
S
S
S
G
1
2
3
4
Top View
8
7
6
5
D
D
D
D
S
N-Channel MOSFET
G
• CCFL Inverter
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
Limit
60
± 20
7.6
a
6.8
6.1
b, c
4.8
b, c
25
4.2
2.1
b, c
15
11.2
5
3.2
2.5
b, c
1.6
b, c
- 55 to 150
Unit
V
Continuous Drain Current (T
J
= 150 °C)
I
D
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
I
DM
I
S
I
AS
E
AS
A
mJ
Maximum Power Dissipation
P
D
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJF
Typical
38
20
Maximum
50
25
Unit
°C/W
1
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