www.din-tek.jp
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= - 250 µA
I
D
= 250 µA
I
D
= - 250 µA
I
D
= 250 µA
II
D
= - 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
DS
= - 5 V, V
GS
= - 10 V
V
GS
= 10 V, I
D
= 5 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= - 10 V, I
D
= - 5 A
V
GS
= 4.5 V, I
D
= 4 A
V
GS
= - 4.5 V, I
D
= - 4 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
P-Channel
V
DS
= - 20 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 20 V, V
GS
= 10 V, I
D
= 5 A
Total Gate Charge
Q
g
V
DS
= - 20 V, V
GS
= - 10 V, I
D
= - 5 A
N-Channel
V
DS
= 20 V, V
GS
= 4.5 V I
D
= 5 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
R
g
P-Channel
V
DS
= - 20 V, V
GS
= - 4.5 V, I
D
= - 5 A
f = 1 MHz
N-Ch
N-Channel
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.5
1.0
640
970
73
120
41
95
11.7
25
5.3
11.8
1.9
3.0
1.7
5.2
2.2
5.5
4.5
11
Ω
20
38
9
18
nC
pF
g
fs
V
DS
= 15 V, I
D
= 5 A
V
DS
= - 15 V, I
D
= - 5 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
10
- 10
0.0195
0.037
0.0255
0.040
22
14
0.024
0.048
0.036
0.058
S
Ω
1.4
- 1.2
30
- 30
44
- 42
- 5.5
4.6
3.0
- 2.5
100
- 100
1
-1
10
- 10
A
µA
V
nA
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
DTM4606
2
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