P-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.20
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DTM4606
I
D
= 5 A
R
DS(on)
- On-Resistance (Ω)
10
I
S
- Source Current (A)
T
J
= 150 °C
1
T
J
= 25 °C
0.16
0.12
0.1
0.08
T
J
= 125 °C
0.01
0.04
T
J
= 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.8
50
On-Resistance vs. Gate-to-Source Voltage
0.6
I
D
= 250
µA
40
V
GS(th)
Variance
(V)
0.4
Power (W)
30
0.2
I
D
= 1 mA
20
0.0
10
- 0.2
- 0.4
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
10
T
J
- Temperature (°C)
Time (s)
Threshold Voltage
100
Single Pulse Power, Junction-to-Ambient
10
Limited
by
R
DS(on)
*
I
D
- Drain Current (A)
1 ms
1
10 ms
100 ms
0.1
T
C
= 25 °C
Single Pulse
0.01
0.01
0.1
1
10
10 s
1s
DC
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
9
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